Heat sink with alignment and retaining features

ABSTRACT

An apparatus for providing heat sinks or heat spreaders for stacked semiconductor devices. Alignment apparatus may be included for the alignment of the stacked semiconductor devices. An enclosure may be used as the heat sink or heat spreader.

CROSS REFERENCES TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No.60/091,156 filed Jun. 30, 1998.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an apparatus and method for providingheat sinks or heat spreaders for stacked semiconductor devices.

2. State of the Art

Semiconductor device packages or integrated circuit packages typicallycontain small integrated circuits on a silicon substrate, or the like,typically referred to as IC chips or die or dice. Such IC dice come inan infinite variety of forms, including, for example, Static RandomAccess Memory (SRAM) dice, Synchronous DRAM (SDRAM) dice, Static RandomAccess Memory (SRAM) dice, Sequential Graphics Random Access Memory(SGRAM) dice, flash Electrically Erasable Programmable Read-only Memory(EEPROM) dice, and processor dice.

Packaged IC dice communicate with circuitry external to their packagesthrough lead frames embedded in the packages. These lead framesgenerally include an assembly of leads that extend into the packages toconnect to bond pads on the IC dice through thin wire bonds or otherconnecting means and extend from the packages to terminate in pins orother terminals that connect to the external circuitry. Exemplaryconventional lead frames include paddle-type wore-bond lead frames,which include a central die support and leads which extend to theperimeter of IC dice and connect to the dice through thin wire bonds,Leads-Over-Chip (LOC) lead frames, having leads which extend over an ICdie to attach to and support the die while being electrically connectedto the die through wire bonds or other connecting means, andLeads-Under-Chip (LUC) lead frames, having leads which extend under anIC die to attach to and support the die from below while being connectedto the die typically through wire bonds.

As with all conductors, the leads in lead frames have an inductanceassociated with them that increases as the frequency of signals passingthrough the leads increases. This lead inductance is the result of twointeractions: the interaction among magnetic fields created by signalcurrents flowing to and from an IC die through the leads and magneticfields created by oppositely directed currents flowing to and fromground (known as “self” inductance).

While lead inductance in IC packages has not traditionally beentroublesome because traditionally slow signal frequencies have made theinductance relatively insignificant, the ever-increasing signalfrequencies of state of the art electronic systems have made leadinductance in IC packages significant.

In an attempt to eliminate such problems, IC die are being mounted onsubstrates, such as printed circuit boards, using flip-chip typemounting arrangements. This allows for a high density of mountingarrangements for the IC die in a small area and solder balls orconductive epoxy to be used for the connections between the IC die andthe substrate. However, the high density of the IC die on the substratewith increased operating speeds for the IC die cause a great amount ofheat to be generated in a small confined area which can be detrimentalto the operation of the IC die and substrate as well as surroundingcomponents. Such heat must be dissipated as effectively as possible toprevent damage to the IC die.

Various arrangements have been suggested for use in dissipating heatfrom IC die on substrates.

U.S. Pat. No. 5,239,200 illustrates an apparatus for cooling an array ofintegrated circuit chips mounted on a substrate comprising a thermallyconductive cooling plate which has a plurality of integral,substantially parallel, closed-end channels for the circulation of acooling medium therethrough.

U.S. Pat. No. 5,379,191 is directed to an adapter for an integratedcircuit chip which may be used in a package arrangement for the chip.The package may include a heat sink or heat spreader on the top of thechip.

U.S. Pat. No. 5,396,403 is directed to a heat sink assembly for amulti-chip module. A thermally conductive plate is bonded to integratedcircuit chips on a multi-chip module by indium solder. The plate, inturn, is thermally coupled to a heat sink, such as a finned aluminummember by thermal paste.

U.S. Pat. No. 5,291,064 is directed to a packaged semiconductor devicehaving a wired substrate. A plurality of semiconductor device chips areconnected to the wiring substrate by the use of bumps. A heat sink isbonded through a high heat conductive bonding layer to a surface of eachof the semiconductor device chips.

However, in each instance of the prior art discussed above, the IC dieor semiconductor devices are installed on the substrate in a singlelayer for the cooling thereof.

A need exists for the cooling of semiconductor devices on a substratewhere the substrates and devices are vertically stacked. In such anarrangement the dissipation of the heat from the semiconductor devicesis of concern.

SUMMARY OF THE INVENTION

The present invention is directed to an apparatus and method forproviding heat sinks or heat spreaders for stacked semiconductordevices. Alignment apparatus may be included for the alignment of thestacked semiconductor devices. An enclosure may be used for the heatsink or heat spreader.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view of a first embodiment of the present invention;

FIG. 2 is a view of a second embodiment of the present invention;

FIG. 3 is a view of a third embodiment of the present invention;

FIG. 4 is a view of fourth embodiment of the present invention;

FIG. 5 is a top view of a heat transfer member of the present invention;

FIG. 6 is a top view of an alternative heat transfer member of thepresent invention;

FIG. 7 is a top view of an alternative heat transfer member of thepresent invention;

FIG. 8 is a top view of an alternative heat transfer member of thepresent invention;

FIG. 9 is a view of a fifth embodiment of the present invention;

FIG. 10 is a top view of the fifth embodiment of the present invention;and

FIG. 11 is a view of the sixth embodiment of the present invention.

The present invention will be better understood when the drawings aretaken in conjunction with the description of the invention hereafter.

DESCRIPTION OF THE INVENTION

Referring to drawing FIG. 1, a first embodiment 10 of the presentinvention is shown. The stacked assembly 10 having heat transfer memberstherewith is illustrated on a substrate 12. The substrate 12 contains aplurality of apertures 14 therein in which the ends of alignment pins 16are retained, such as using an interference fit, adhesive bonding,threaded connections, etc., the alignment pins 16 may be of any suitablematerial for use in the aligning of the substrates 12 having sufficientstrength and heat conductivity, such as metal, high temperature plastic,etc. The substrate 12 further includes a plurality of circuit traces 18thereon. Stacked on substrate 12 are a plurality of semiconductor deviceassemblies 100, each assembly 100 including a semiconductor device 102mounted on a substrate 104 having a plurality of circuits thereonconnected to bond pads on the semiconductor device 102. The substratefurther includes a plurality of vias or circuits therein for connectionto other adjacent substrates by suitable connections therewith. Suchsuitable connections may be made by the use of reflowed solder balls106. As illustrated, located between vertically adjacent assemblies 100are heat transfer plates 50. The heat transfer plates 50 are formedhaving apertures 52 therein through which alignment pins 16 extend andelongated slots 54 through which reflowed solder balls 106 extend tomake contact with circuits on adjacent substrates 104. The heat transferplates 50 have a portion thereof in contact with the inactive surface ofthe semiconductor device 102 of the assembly 100 to transfer the heattherefrom during the operation of the semiconductor device 102. Ifdesired, a thermal grease may be applied to the inactive surface of thesemiconductor device 102 and/or the portion of the heat transfer plate50 which contacts the inactive surface of the semiconductor device 102to facilitate the transfer of heat from the semiconductor device 102.The elongated slots 54 have sufficient width to allow no electricalcontact from the reflowed solder balls 106 extending therethrough. Thereflowed solder balls 106 extending from the bottom surface of thesubstrate 104 of the lowest assembly 100 in the vertical stackelectrically and mechanically contact circuit traces 18 on the uppersurface of the substrate 12. The alignment apertures 52 in the heattransfer plates 50 are typically circular to closely mate with thealignment pins 16 to align the heat transfer plates 50 on the substrate12 which, in turn, aligns the assemblies 100 located between the heattransfer plates 50 on the substrate 12.

To provide additional heat transfer from the upper semiconductor device102 which has no heat transfer plate 50 associated therewith a finnedheat transfer member 60 having a plurality of fins 62 thereon andalignment apertures 64 therein is placed into contact with the inactivesurface of the semiconductor device 102. The fins 62 may be integrallyformed on the heat transfer member 60 or may be secured thereto by anysuitable means, such as welding, or the like. The fins 62 may extend inany desired direction of the heat transfer member 60 as desired. Thealignment apertures 64 are used to locate the heat transfer member 60using alignment pins 16 secured to the substrate 12. A thermal greasemay be applied to the inactive surface of the semiconductor device 102and/or a portion of the lower surface of the heat transfer member 60 toaid in heat transfer from the semiconductor device 102. If desired, aheat transfer plate 50 (shown in dotted lines) such as described herein,may be used between upper semiconductor device 102 and heat transfermember 60 for additional heat transfer from the upper semiconductordevice 102. If desired, a thermal grease may be used between the uppersemiconductor device 102 and the heat transfer plate 50 and the heattransfer member 60.

Referring to drawing FIG. 2, a second embodiment 20 of the presentinvention is illustrated. The second embodiment 20 of the presentinvention being the same as the first embodiment 10 of the inventionexcept as described hereinafter. A plurality of assemblies 100 arevertically stacked on a substrate 12 having a plurality of circuittraces 18 on the upper surface thereof and alignment pins 16 extendingtherefrom. The heat transfer plates 50 in the second embodiment of theinvention illustrated include a plurality of annular heat conductivemembers 108 therebetween which are retained on the alignment pins 16between adjacent heat transfer plates 50 in the plurality of verticallystacked assemblies 100. The annular heat conductive members 108 may becomprised of any suitable material, such as easily deformable metal, areinforced heat conductive elastomeric material, such as silicon rubberhaving an annular spirally wound spring 110 therein, etc. The annularheat conductive members 108 helping to transfer heat from one heattransfer plate 50 to an adjacent heat transfer plate 50 and to the heattransfer member 60 to provide an additional heat transfer path for thestacked assemblies 100.

Referring to drawing FIG. 3, a third embodiment 30 of the presentinvention is illustrated. The third embodiment 30 of the presentinvention is the same as the first embodiment 10 and second embodiment20 of the present invention except as described hereinafter. The thirdembodiment 30 of the present invention includes a plurality ofvertically stacked assemblies 100 connected to a substrate 12 beingaligned thereon by alignment pins 16. An additional heat transfer pathfor conducting heat from the individual semiconductor devices 102connected to substrates 104 is provided by the inclusion of heattransfer spacers 112 located between adjacent heat transfer plates 50and the bottom of adjacent substrates 104 of assemblies 100. The heattransfer spacers 112 may be of any suitable material, such as an easilydeformable metal, silicon rubber, an annular elastomeric member filledwith thermal grease, etc. In this manner, heat transfer from thesemiconductor device 102 is provided by heat transfer plate 50, heattransfer member 60, annular heat transfer members 108, and heat transferspacers 112 to the ambient atmosphere and through heat transfer member60 to the ambient atmosphere.

Referring to drawing FIG. 4, a fourth embodiment 40 of the presentinvention is illustrated. The fourth embodiment 40 of the presentinvention comprises vertically stacked assemblies 100 as describedhereinbefore on substrate 12 using alignment pins 16. The assemblies 100are in contact with heat transfer plates 50 and heat transfer members60. If desired, annular heat transfer members 108 (show in dotted lines)may be used as well as heat transfer spacers 112 (shown in dotted lines)as described hereinbefore for the transfer of heat from semiconductordevices 102 during operation.

Referring to drawing FIG. 5, a heat transfer plate 50 is illustrated.The heat transfer plate 50 is generally rectangular in shape havingalignment holes 52 therethrough and having elongated slots 54 therein.The heat transfer plate 50 may be of any desired thickness sufficientfor the effective heat transfer from semiconductor device 102 (notshown) in contact therewith.

Referring to drawing FIG. 6, an alternative heat transfer member 50′ isillustrated, The alternative heat transfer member 50′ is generallyshaped having the crossbars of the T's located at each end and the stemsof the T's joined with alignment apertures 52 formed therein. In thismanner, additional clearance for the reflowed solder balls 106 isprovided.

Referring to drawing FIG. 7, another alternative heat transfer member50″ is illustrated. The heat transfer member 50″ is generally circularin shape having alignment apertures 52 therein and elongated slots 54formed therein. The circular shape of the heat transfer member 50″provides additional material for the transfer of heat away from thesemiconductor device 102 (not shown) which contacts the member 50″.

Referring to drawing FIG. 8, yet another alternative heat transfermember 50′″ is illustrated. The heat transfer member 50′″ is generallyelipical in shape having alignment apertures 52 therein and elongatedslots 54 formed therein. The circular shape of the heat transfer member50′″ provides additional material for the transfer of heat away from thesemiconductor device 102 (not shown) which contacts the member 50′″.

Referring to drawing FIG. 9, a fifth embodiment 80 of the presentinvention is illustrated. The fifth embodiment 80 includes a pluralityof vertically stacked assemblies 100. Each assembly 100 includes asemiconductor device 102 mounted on a substrate 104 as describedhereinbefore. Each assembly 100 being electrically and mechanicallyconnected to an adjacent assembly 100 by means of reflowed solder balls106 extending therebetween. Each substrate 104 of the assembly 100having circuits thereon, circuits therein, and vias extendingtherethrough, as required, to make electrical contact as required withthe semiconductor device 102. Surrounding each substrate 104 is a heattransfer member 150. Each assembly 100 is contained or installed or hasextending therearound a heat transfer member 150. The heat transfermember 150 comprises a member of suitable metal having downwardlyextending retention T-shaped flanges 152, upon a portion of which asubstrate 104 sits, and upwardly extending L-shaped members 154, theupper portion 156 serving as support for the assembly 100 locatedthereabove having a heat transfer member 150 located therearound. Theportion 156 of L-shaped members 154 having an area 158 into which lowerportion 160 of retention T-shaped flanges 152 extends to locate,position, and retain the heat transfer member 150 in position withrespect to an adjacent heat transfer member 150 as well as locating andpositioning the assembly 100 within the heat transfer member 150 withrespect to an adjacent assembly 100 in its heat transfer member 150.

Referring to drawing FIG. 10, an assembly 100 having heat transfermember 150 located therearound is illustrated. In addition to retentionT-shaped flanges 152 and L-shaped members 154 retaining the assembly 100in the heat transfer member 150, additional L-shaped members 164 areused on the other sides of the heat transfer member 150, not illustratedin drawing FIG. 9, to retain the substrate 104 of the assembly 100 inposition in the heat transfer member 150. Some of the additionalL-shaped members 164 extend over or above the assembly 100 while otherL-shaped members 164 extend therebelow to act as a ledge or support forthe substrate 104 of the assembly 100 when it is installed in the heattransfer member 150. As illustrated, the reflowed solder balls 106extend in two rows along two portions of the substrate 104.

Referring to drawing FIG. 11, a sixth embodiment 180 of the presentinvention is illustrated. The sixth embodiment 180 includes a pluralityof assemblies 100 comprising substrates 104 having semiconductor devices102 thereon, each substrate 104 being electrically and mechanicallyconnected to an adjacent substrate 104 by reflowed solder balls 106extending therebetween. The plurality of assemblies 100 are containedwithin an enclosure 170 having a plurality of vertical heat transferfins 172 thereon and a plurality of horizontal heat transfer fins 174extending thereacross. The lowermost assembly 100 is formed havingsubstantially the same shape as opening 178 of the enclosure 170 so thatthe plurality of assemblies 100 may be retained therein, except for thebottom of the substrate 104 of the lowermost assembly 100 and the solderreflowed balls 106 thereon, and a seal 176 is used to sealingly engagethe substrate 104 and enclosure 170 to form an enclosed, lead freemember. The enclosure 170 may be made of any suitable material, such asmetal, plastic, etc., and may be of any desired suitable geometricshape. Any desired number of heat fins 172 and 174 may be used on theenclosure 170. The heat transfer fins 172 and 174 may have any desiredshape suitable for use on the enclosure 170. The heat transfer fins 172and 174 may be integrally formed on the enclosure 170 or attachedthereto using any desired suitable attachment devices, such asadhesives, soldering, etc. Any desired number of assemblies 100 may beused in the enclosure 170, as desired. The enclosure 170 may be filledwith a suitable heat transfer fluid, such as thermal grease, oil, etc.

The present invention may include changes, additions, deletions,modifications which are within the scope of the invention.

What is claimed is:
 1. An assembly comprising: a first substrate havinga first surface, a second surface, a plurality of circuits thereon, atleast one circuit located on the first surface and the second surface; afirst semiconductor device located on the first surface of the firstsubstrate, the semiconductor device having a first surface, a secondsurface, and a periphery, the second surface of the semiconductor deviceconnected to the first surface of the first substrate; a secondsubstrate having a first surface, a second surface, at least one circuitlocated on the first surface thereof, at least one aperture therein, andat least one alignment pin having a portion thereof secured in a portionof the at least one aperture; a first heat transfer device having atleast one aperture therein and at least one slot therein, the first heattransfer device in contact with a portion of the first semiconductordevice, the at least one alignment pin of the second substrate extendingthrough the at least one aperture in the first heat transfer device; andat least one connector extending between a circuit on the second surfaceof the first substrate and a circuit on the first surface of the secondsubstrate.
 2. The assembly of claim 1, further comprising: a thirdsubstrate having a first surface, a second surface, a plurality ofcircuits thereon, at least one circuit located on the first surface andthe second surface; a second semiconductor device located on the firstsurface of the third substrate; and at least one connector extendingbetween a circuit on the first surface of the first substrate and acircuit on the second surface of the third substrate, the connectorextending through the at least one slot in the first heat transferdevice.
 3. The assembly of claim 2, further comprising: a second heattransfer device in contact with the first surface of the secondsemiconductor device, the second heat transfer device having at leastone aperture therein, the at least one alignment pin of the secondsubstrate having a portion thereof extending into the at least oneaperture in the second heat transfer device.
 4. The assembly of claim 2,further comprising: a third heat transfer device, the third heattransfer device in contact with a portion of the second surface of thethird substrate and a portion of the first surface of the first heattransfer device.
 5. The assembly of claim 2, further comprising: afourth substrate having a first surface, a second surface, a pluralityof circuits thereon, at least one circuit located on the first surfaceand the second surface; a third semiconductor device located on thefirst surface of the fourth substrate; another first heat transferdevice having at least one aperture therein and at least one slottherein, the another first heat transfer device connected to the fourthsubstrate, the at least one alignment pin of the second substrateextending through the at least one aperture in the another first heattransfer device; at least one connector extending between a circuit onthe first surface of the third substrate and a circuit on the secondsurface of the fourth substrate, the connector extending through the atleast one slot in the another first heat transfer device; and a fourthheat transfer device located on the at least one alignment pin of thesecond substrate, the fourth heat transfer device located between thefirst heat transfer device and the another heat transfer device.
 6. Theassembly of claim 3, wherein the second heat transfer device includesfins thereon.
 7. An assembly comprising: a first substrate having afirst surface, a second surface, a plurality of circuits thereon, atleast one circuit located on the first surface and the second surface; afirst semiconductor device located on the first surface of the firstsubstrate, the semiconductor device having a first surface, a secondsurface, and a periphery, the second surface of the semiconductor deviceconnected to the first surface of the first substrate; a first heattransfer device having at least one aperture therein and at least oneslot therein, the first heat transfer device in contact with a portionof the first semiconductor device, said first heat transfer deviceextending substantially parallel and outwardly beyond a periphery ofsaid first substrate; at least one connector connected to a circuit onthe second surface of the first substrate; a second substrate having afirst surface, a second surface, a plurality of circuits thereon, atleast one circuit located on the first surface and the second surface; asecond semiconductor device located on the first surface of the secondsubstrate, the second semiconductor device having a first surface, asecond surface, and a periphery, the second surface of the secondsemiconductor device connected to the first surface of the secondsubstrate; and at least one first connector extending between a circuiton the first surface of the first substrate and a circuit on the secondsurface of the second substrate, the at least one connector extendingthrough the at least one slot in the first heat transfer device.
 8. Theassembly of claim 7, further comprising: a second heat transfer devicehaving at least one aperture therein and at least one slot therein, thesecond heat transfer device in contact with a portion of the secondsemiconductor device.
 9. The assembly of claim 7, wherein the first heattransfer device includes at least one T-shaped portion and at least oneL-shaped portion.
 10. The assembly of claim 9, wherein a portion of theat least one T-shaped portion of the first heat transfer device retainsa portion of the first substrate therein.
 11. The assembly of claim 10,wherein a portion of the at least one L-shaped portion of the first heattransfer device retains a portion of the first substrate therein.
 12. Anassembly comprising: a first substrate having a first surface, a secondsurface, a plurality of circuits thereon, at least one circuit locatedon the first surface and the second surface; a first semiconductordevice located directly on the first surface of the first substrate, thesemiconductor device having a first surface, a second surface, and aperiphery, the second surface of the semiconductor device connected tothe first surface of the first substrate; at least one connectorconnected to a circuit on the second surface of the first substrate; asecond substrate having a first surface, a second surface, a pluralityof circuits thereon, at least one circuit located on the first surfaceand the second surface; a second semiconductor device located on thefirst surface of the second substrate, the second semiconductor devicehaving a first surface, a second surface, and a periphery, the secondsurface of the second semiconductor device connected to the firstsurface of the second substrate; at least one first connector connectedto a circuit on the second surface of the first substrate; at least onesecond connector connected to a circuit on the first surface of thefirst substrate and a circuit on the second surface of the secondsubstrate; and an enclosure containing the first substrate and thesecond substrate therein, the enclosure having a portion thereofsealingly engaging a portion of the first substrate.
 13. The assembly ofclaim 12, further comprising: at least one fin connected to a portion ofthe enclosure.
 14. A semiconductor device assembly comprising: a firstsubstrate having a first surface, a second surface, a plurality ofcircuits thereon, at least one circuit located on the first surface andthe second surface; a first semiconductor device located on the firstsurface of the first substrate, the semiconductor device having a firstsurface, a second surface, and a periphery, the second surface of thefirst semiconductor device connected to the first surface of the firstsubstrate; a second substrate having a first surface, a second surface,at least one circuit located on the first surface thereof, at least oneaperture therein, and at least one alignment pin having a portionthereof secured in a portion of the at least one aperture; a first heattransfer member having at least one aperture therein and at least oneslot therein, the first heat transfer member in contact with a portionof the first semiconductor device, the at least one alignment pin of thesecond substrate configured to extend through the at least one aperturein the first heat transfer member; and at least one connector extendingbetween a circuit on the second surface of the first substrate and acircuit on the first surface of the second substrate.
 15. Thesemiconductor device assembly of claim 14, further comprising: a thirdsubstrate having a first surface, a second surface, a plurality ofcircuits thereon, at least one circuit located on the first surface andthe second surface; a second semiconductor device located on the firstsurface of the third substrate; and at least one connector extendingbetween a circuit on the first surface of the first substrate and acircuit on the second surface of the third substrate, the at least oneconnector extending through the at least one slot in the first heattransfer member.
 16. The semiconductor device assembly of claim 15,further comprising: a second heat transfer member in contact with thefirst surface of the second semiconductor member, the second heattransfer device having at least one aperture therein, the at least onealignment pin of the second substrate having a portion thereof extendinginto the at least one aperture in the second heat transfer member. 17.The semiconductor device assembly of claim 15, further comprising: athird heat transfer member, the third heat transfer member in contactwith a portion of the second surface of the third substrate and aportion of the first surface of the first heat transfer member.
 18. Thesemiconductor device assembly of claim 15, further comprising: a fourthsubstrate having a first surface, a second surface, a plurality ofcircuits thereon, at least one circuit located on the first surface andthe second surface; a third semiconductor device located on the firstsurface of the fourth substrate; another first heat transfer memberhaving at least one aperture therein and at least one slot therein, theanother first heat transfer member connected to the fourth substrate,the at least one alignment pin of the second substrate extending throughthe at least one aperture in the another first heat transfer member; atleast one connector extending between a circuit on the first surface ofthe third substrate and a circuit on the second surface of the fourthsubstrate, the at least one connector extending through the at least oneslot in the another first heat transfer member; and a fourth heattransfer member located on the at least one alignment pin of the secondsubstrate, the fourth heat transfer member located between the firstheat transfer member and the another heat transfer member.
 19. Thesemiconductor device assembly of claim 16, wherein the second heattransfer member includes fins thereon.
 20. A semiconductor deviceassembly comprising: a first substrate having a first surface, a secondsurface, a plurality of circuits thereon, at least one circuit locatedon the first surface and the second surface; a first semiconductordevice located on the first surface of the first substrate, thesemiconductor device having a first surface, a second surface, and aperiphery, the second surface of the semiconductor device connected tothe first surface of the first substrate; a first heat transfer memberhaving at least one aperture therein and at least one slot therein, thefirst heat transfer member in contact with a portion of the firstsemiconductor device, said first heat transfer member configured toextend substantially parallel and outwardly beyond a periphery of saidfirst substrate; at least one connector connected to a circuit on thesecond surface of the first substrate; a second substrate having a firstsurface, a second surface, a plurality of circuits thereon, at least onecircuit located on the first surface and the second surface; a secondsemiconductor device located on the first surface of the secondsubstrate, the second semiconductor device having a first surface, asecond surface, and a periphery, the second surface of the semiconductordevice connected to the first surface of the second substrate; and atleast one first connector is connected to a circuit on the first surfaceof the first substrate and a circuit on the second surface of the secondsubstrate, the at least one connector configured to extend through theat least one slot in the first heat transfer member.
 21. Thesemiconductor device assembly of claim 20, further comprising: a secondheat transfer member having at least one aperture therein and at leastone slot therein, the second heat transfer member in contact with aportion of the second semiconductor device.
 22. The semiconductor deviceassembly of claim 20, wherein the first heat transfer member includes atleast one T-shaped portion and at least one L-shaped portion.
 23. Thesemiconductor device assembly of claim 22, wherein a portion of the atleast one T-shaped portion of the first heat transfer member retains aportion of the first substrate therein.
 24. The semiconductor deviceassembly of claim 23, wherein a portion of the at least one L-shapedportion of the first heat transfer member retains a portion of the firstsubstrate therein.
 25. The semiconductor device assembly of claim 20,wherein the first heat transfer member includes at least one circularshaped heat transfer member.
 26. The semiconductor device assembly ofclaim 20, wherein the first heat transfer member includes at least oneelliptical shaped heat transfer member.
 27. A semiconductor deviceassembly comprising: a first substrate having a first surface, a secondsurface, a plurality of circuits thereon, at least one circuit locatedon the first surface and the second surface; a first semiconductordevice directly contacting the first surface of the first substrate, thesemiconductor device having a first surface, a second surface, and aperiphery, the second surface of the first semiconductor deviceconnected to the first surface of the first substrate; at least oneconnector connected to a circuit on the second surface of the firstsubstrate; a second substrate having a first surface, a second surface,a plurality of circuits thereon, at least one circuit located on thefirst surface and the second surface; a second semiconductor devicelocated on the first surface of the second substrate, the secondsemiconductor device having a first surface, a second surface, and aperiphery, the second surface of the second semiconductor deviceconnected to the first surface of the second substrate; at least onefirst connector connected to a circuit on the second surface of thefirst substrate; at least one second connector connected to a circuit onthe first surface of the first substrate and a circuit on the secondsurface of the second substrate; and an enclosure configured to containthe first substrate and the second substrate therein, the enclosurehaving a portion thereof configured to sealingly engage a portion of thefirst substrate.
 28. The semiconductor device assembly of claim 27,further comprising: at least one fin connected to a portion of theenclosure.
 29. A semiconductor device assembly comprising: a firstsubstrate having a first surface, a second surface, a plurality ofcircuits thereon, at least one circuit located on the first surface andthe second surface; a first semiconductor device located on the firstsurface of the first substrate, the first semiconductor device having afirst surface, a second surface, and a periphery, the second surface ofthe first semiconductor device connected to the first surface of thefirst substrate; a second substrate having a first surface, a secondsurface, at least one circuit located on the first surface thereof, atleast one aperture therein, and at least one alignment pin having aportion thereof secured in a portion of the at least one aperture; afirst heat transfer device having at least one aperture therein and atleast one slot therein, the first heat transfer device in contact with aportion of the first semiconductor device, the at least one alignmentpin of the second substrate extending through the at least one aperturein the first heat transfer device; at least one connector extendingbetween a circuit on the second surface of the first substrate and acircuit on the first surface of the second substrate; a secondsemiconductor device located on the first surface of the secondsubstrate, the second semiconductor device having a first surface, asecond surface, and a periphery, the second surface of the secondsemiconductor device connected to the first surface of the secondsubstrate; a third substrate having a first surface, a second surface,at least one circuit located on the first surface thereof; a second heattransfer device having at least one aperture therein and at least oneslot therein, the second heat transfer device in contact with a portionof the second semiconductor device, the at least one alignment pin ofthe second substrate extending through the at least one aperture in thesecond heat transfer device; and at least one connector extendingbetween a circuit on the second surface of the third substrate and acircuit on the first surface of the first substrate.
 30. Thesemiconductor device assembly of claim 29, further comprising: a fourthsubstrate having a first surface, a second surface, a plurality ofcircuits thereon, at least one circuit located on the first surface andthe second surface; a third semiconductor device located on the firstsurface of the fourth substrate; and at least one connector extendingbetween a circuit on the first surface of the third substrate and acircuit on the second surface of the fourth substrate, the at least oneconnector extending through the at least one slot in the second heattransfer device.
 31. The semiconductor device assembly of claim 30,further comprising: a third heat transfer device in contact with thefirst surface of the third semiconductor device, the third heat transferdevice having at least one aperture therein, the at least one alignmentpin of the second substrate having a portion thereof extending into theat least one aperture in the third heat transfer device.
 32. Thesemiconductor device assembly of claim 31, further comprising: a fourthheat transfer device, the fourth heat transfer device in contact with aportion of the second surface of the fourth substrate and a portion ofthe first heat transfer device.
 33. The semiconductor device assembly ofclaim 31, further comprising: a fifth substrate having a first surface,a second surface, a plurality of circuits thereon, at least one circuitlocated on the first surface and the second surface; a fourthsemiconductor device located on the first surface of the fifthsubstrate; another first heat transfer device having at least oneaperture therein and at least one slot therein, the another first heattransfer device connected to the fourth semiconductor device, the atleast one alignment pin of the second substrate extending through the atleast one aperture in the another first heat transfer device; at leastone connector extending between a circuit on the first surface of thefourth substrate and a circuit on the second surface of the fifthsubstrate, the at least one connector extending through the at least oneslot in the third heat transfer device; and a fourth heat transferdevice located on the at least one alignment pin of the secondsubstrate, the fourth heat transfer device located between the firstheat transfer device and the another first heat transfer device.
 34. Thesemiconductor device assembly of claim 33, wherein the another firstheat transfer device includes fins thereon.